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不同疏松度TA2基材对RuO2-TiO2阳极性能的影响
钛基 疏松度 阳极涂层 电化学性能
2009/11/12
采用不同疏松度的工业纯钛TA2为基材制作RuO2-TiO2阳极涂层. 对不同疏松度基材进行了金相、物相、密度、硬度和电阻率分析，并对所制钛阳极的组织结构、形貌特征、电催化活性和耐腐蚀性进行了比较. 结果表明，疏松度大(疏松)的纯钛TA2硬度比疏松度小(密实)的高60 Hv，电阻率高将近0.2 W×mm；不同基材对阳极涂层的晶体结构影响不大，采用疏松纯钛TA2所制电极的涂层由于刻蚀程度难以控制，涂层...
RuO2、IrO2和Ta2O5多元氧化物涂层阳极的研究
混合金属氧化物 阳极 涂层
2009/9/24
采用H2IrCl6·H2O、RuCl3·3H2O、TaCl5及添加剂组成的复合溶液，利用溶胶-凝胶法工艺在钛基体和预镀钽的钛钽表面氧化烧结形成活性RuO2、IrO2和Ta2O5组成的多元金属氧化物涂层阳极.制备了混合金属氧化物涂层并对制备工艺及其对氧化物涂层结构和化学成分的影响进行了研究.结果表明，H2IrCl6·H2O的含量对氧化物涂层和涂层结合力有直接影响，在IrO2(H2IrCl6·H2O当...
以RuCl3·3H2O水溶液为电沉积液，采用直流W22;示差脉冲组合电沉积技术，通过后续热处理工艺制备超级电容器用钽基RuO2·nH2O薄膜电极材料。用X射线衍射仪 (XRD)、红外光谱仪 (FTIR)、差热分析仪 (DTA)、扫描电镜 (SEM)和电化学分析仪，研究前驱体RuCl3·cH2O转化为RuO2·nH2O的物相演变行为以及微观组织形貌和循环伏安性能。结果表明：随着热处理温度升高，...
退火温度对钽基RuO2·nH2O电沉积薄膜电容性能的影响
电沉积 RuO2·nH2O薄膜 电容 退火温度
2009/8/27
以RuCl3·xH2O的水溶液为电沉积溶液,通过恒流电沉积法在钽箔上电沉积一层RuO2·nH2O薄膜,研究退火温度对RuO2·nH2O薄膜的电容性能的影响;采用CHI660B电化学测试仪和循环伏安法对薄膜的电容性能进行测试;分别采用扫描电子显微电镜、能谱仪及X射线衍射仪对薄膜的形貌和微孔形态、薄膜元素及薄膜的物相进行分析。结果表明,未经退火处理的RuO2·nH2O薄膜的电容性能不稳定,在循环伏安法...
介孔TiO2晶须及其担载RuO2的电容性能
RuO2 晶须 介孔TiO2
2009/2/6
烧结法制备的介孔TiO2晶须具有高结晶度，孔径可控，并且制备成本低，可以大规模生产。如能将该材料用于电化学电容器电极材料，则可以降低成本、提高电容器性能。采用孔径分布在10 nm左右的介孔TiO2晶须及其担载氧化钌的材料制备了电极，循环伏安法分析表明该材料在中性的0.1 mol·L-1的Na2SO4溶液中即具有典型的电容行为，并且在较宽的扫描范围表现出一定的电容特性;介孔TiO2晶须担载RuO2...
以RuCl3∙3H2O水溶液为电沉积液，采用直流-示差脉冲组合电沉积技术制备超级电容器用钽基RuO2∙nH2O薄膜阴极材料。借助扫描电镜、X射线衍射仪和电化学分析仪，研究RuO2∙nH2O薄膜的微观形貌、物相结构、循环伏安和充放电性能。实验结果表明：RuCl3∙3H2O先驱体经热处理后转变成RuO2∙nH2O薄膜，呈不定形结构时能获得较大...
The Effect of Various Factors on the Resistance and TCR of RuO2 Thick Film Resistors—Relation Between the Electrical Properties and Particle Size of Constituents, the Physical Properties of Glass and Firing Temperature
RuO2 Thick Film Resistors Constituents Glass and Firing Temperature
2010/12/21
Thick film resistors were prepared with different variables, they included various conductive particle sizes, glass particle sizes, glass softening temperatures, thermal expansion coefficients of the ...
Effect of V2O5 Dopant on the Electrical Conductivity of RuO2 Thick Film Resistors
V2O5 Dopant RuO2 Thick Film Resistors solid state reaction
2010/12/21
Thick film glaze resistors have been prepared using V2O5 doped RuO2 conducting phase. Different amounts of V2O5 were incorporated into RuO2lattice by solid state reaction. Sheet resistivity decreased ...
Control of Electrical Properties of RuO2 Thick Film Resistors
Thick-film resistors hybrids ruthenium-dioxide
2010/12/21
Oxides of various elements have been added to RuO2 thick film resistors and the electrical properties of the resultant resistors have been examined.It is found that almost all the oxides of transition...
Measurement of the Tunneling and Hopping Parameters in RuO2 Thick Films
the Tunneling and Hopping Parameters RuO2 Thick Films
2010/12/23
Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina [(Al2O3)·96(MgO)·04] substrates. The temperature coefficient of res...
Electron Tunneling and Hopping Possibilites in RuO2 Thick Films
Electron Tunneling and Hopping Possibilites RuO2 Thick Films TCR
2010/12/23
It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle-to-particle conduction, (ii) electron tunneling, and (iii)...
Strange Temperature Characteristics of RuO2-Based Thick Film Resistors
Temperature Characteristics RuO2-Based Thick Film Resistors
2010/12/28
In some experiments on improving the electrical properties of the thick film resistors, we have found that some, the TCRs of which are nearly zero, can be made easily by doping with MnO: the conductiv...