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MIT engineers “grow” atomically thin transistors on top of computer chips(图)
计算机芯片 原子薄晶体管 低温生长 集成电路
2023/6/6
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter3 Bipolar Junction Transistors
西安电子科技大学电子工程学院 模拟电子线路 英文课件 Chapter3 Bipolar Junction Transistors
2020/6/10
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter3 Bipolar Junction Transistors。
Berkeley Lab Scientists Grow Atomically Thin Transistors and Circuits
Berkeley Lab Scientists Atomically Thin Transistors Circuits
2016/7/15
In an advance that helps pave the way for next-generation electronics and computing technologies—and possibly paper-thin gadgets —scientists with the U.S. Department of Energy’s Lawrence Berkeley Nati...
Millimeter Wave Indium Phosphide Heterojunction Bipolar Transistors: Noise Performance and Circuit Applications
InP HBT LNA Modelling Transistor Small-signal modelling
2014/12/8
The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency o...
Nanowire bridging transistors open way to next-generation electronics
Nanowire bridging transistors open way next-generation electronics
2014/6/12
A new approach to integrated circuits, combining atoms of semiconductor materials into nanowires and structures on top of silicon surfaces, shows promise for a new generation of fast, robust electroni...
Temperature dependence of frequency response characteristics in organic field-effect transistors
MIS capacitors frequency response organic compounds organic field effect transistors 8432Tt 8530Tv
2016/12/2
The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characte...
Low-voltage organic thin-film transistors with polymeric nanocomposite dielectrics
Organic Nanoparticle Dielectrics Thin-film transistors
2011/11/24
High performance organic thin-film transistors (OTFTs) incorporated with high dielectric nanoparticles in the dielectric layers have been demonstrated. The dielectric insulator consists of cross-linke...
An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this paper. By performing repeated oxidation and de-oxidation procedures by using AFM f...
Present status of amorphous In–Ga–Zn–O thin-film transistors
Present status amorphous In–Ga–Zn–O thin-film transistors
2010/10/12
The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expec...
Optimum Design of Organic Electrochemical Type Transistors for Applications in Biochemical Sensing
Optimum Design Organic Electrochemical Type Transistors Biochemical Sensing
2009/9/4
This paper addresses the issue of optimizing various performance parameters involved in the design of organic electrochemical type transistors based on the conducting polymer, poly (3,4-ethylene...
The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors
Doping InP-Based Double Heterojunction Bipolar Transistors
2009/7/28
High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measure...
Statistical Model of Hot-Carrier Degradation and Lifetime Prediction for P-MOS Transistors
Hot-carrier P-MOS transistor lifetime prediction
2009/7/28
Along with advances in microelectronics, and computer and space technologies, device dimensions are becoming smaller; as a result, hot-carrier effect, lifetime prediction, and reliability become more ...
A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an a...
MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors
Delta doping Heterojunction bipolar transistor
2010/12/7
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter curr...
Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors
Functional Stress VDOMS Power Transistors
2010/12/7
The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation...