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Emerging AI applications, like chatbots that generate natural human language, demand denser, more powerful computer chips. But semiconductor chips are traditionally made with bulk materials, which are...
In an advance that helps pave the way for next-generation electronics and computing technologies—and possibly paper-thin gadgets —scientists with the U.S. Department of Energy’s Lawrence Berkeley Nati...
The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency o...
A new approach to integrated circuits, combining atoms of semiconductor materials into nanowires and structures on top of silicon surfaces, shows promise for a new generation of fast, robust electroni...
The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characte...
High performance organic thin-film transistors (OTFTs) incorporated with high dielectric nanoparticles in the dielectric layers have been demonstrated. The dielectric insulator consists of cross-linke...
An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this paper. By performing repeated oxidation and de-oxidation procedures by using AFM f...
The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expec...
This paper addresses the issue of optimizing various performance parameters involved in the design of organic electrochemical type transistors based on the conducting polymer, poly (3,4-ethylene...
High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measure...
Along with advances in microelectronics, and computer and space technologies, device dimensions are becoming smaller; as a result, hot-carrier effect, lifetime prediction, and reliability become more ...
A model for thin-film field-effect transistors in which the active layer is treated as purely two-dimensional is applied to ambipolar devices that have shown to be light emitting. This results in an a...
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter curr...
The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation...

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