搜索结果: 1-15 共查到“电子科学与技术 transistors”相关记录16条 . 查询时间(0.192 秒)
MIT engineers “grow” atomically thin transistors on top of computer chips（图）
计算机芯片 原子薄晶体管 低温生长 集成电路
2023/6/6
Emerging AI applications, like chatbots that generate natural human language, demand denser, more powerful computer chips. But semiconductor chips are traditionally made with bulk materials, which are...
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter3 Bipolar Junction Transistors
西安电子科技大学电子工程学院 模拟电子线路 英文课件 Chapter3 Bipolar Junction Transistors
2020/6/10
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter3 Bipolar Junction Transistors。
Nanowire bridging transistors open way to next-generation electronics
Nanowire bridging transistors open way next-generation electronics
2014/6/12
A new approach to integrated circuits, combining atoms of semiconductor materials into nanowires and structures on top of silicon surfaces, shows promise for a new generation of fast, robust electroni...
The Effect of Collector Doping on InP-Based Double Heterojunction Bipolar Transistors
Doping InP-Based Double Heterojunction Bipolar Transistors
2009/7/28
High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measure...
Statistical Model of Hot-Carrier Degradation and Lifetime Prediction for P-MOS Transistors
Hot-carrier P-MOS transistor lifetime prediction
2009/7/28
Along with advances in microelectronics, and computer and space technologies, device dimensions are becoming smaller; as a result, hot-carrier effect, lifetime prediction, and reliability become more ...
MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors
Delta doping Heterojunction bipolar transistor
2010/12/7
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter curr...
Analysis and Simulation of Functional Stress Degradation on VDOMS Power Transistors
Functional Stress VDOMS Power Transistors
2010/12/7
The use of VDMOS transistor under certain functional stress conditions produces a modification of its physical and electrical properties. This paper explores the physical analysis and SPICE simulation...
Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
MOS Transistor Surface roughness Effective mobility Series resistance
2010/12/8
The aim of this work is therefore to propose an original method especially conceived for the extraction of the series resistance Rsd. Using the approach of the Surface Roughness Scattering which enabl...
Relaxable Damage in Hot-Carrier Stressing of n-MOS Transistors
Stress relaxation diode parameters
2010/12/9
A method for device characterization is experimented to qualify the relaxable damage in hot-carrier stressing of n-MOS transistors. The degradation of physical parameters of the body-drain junction of...
High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors
HIBTRA simulation BPJT
2010/12/9
This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. The paper discusses about the modelling of Bipolar Junction ...
Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors
Hot-carrier degradation MOSFET gate geometry
2010/12/9
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of ...
DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
NERFET MBE NDR a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor
2010/12/10
DC and AC performances of a GaAs/InGaAs/AIGaAs negative resistance field-effect transistor (NERFET) are demonstrated by molecular beam epitaxy (MBE) for the first time. The negative differential resis...
Surface Recombination Via Interface Defects in Field Effect Transistors
Recombination current oxide semiconductor energy level
2010/12/10
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependen...
Analysis and Modeling of Depletion-Mode MOS Transistors
Depletion-Mode MOS Transistors mode MOSFET
2010/12/13
Masuhara et. al (1972) developed a model for analysis of this device as an enhancement mode MOSFET. The model was adequate for analysis of lightly-doped, shallow-implanted channels. Subsequently, a mo...
Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors
Noise Model Determination Double Polysilicon Self-Aligned Bipolar Transistors
2010/12/14
In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters ...